Seongnam, South Korea

Ji-Hoon Choi

This inventor holds 35 USPTO granted patents and 7 published patent applications, plus 2 CIPO patents and 2 EPO patents, primarily in Semiconductor Devices. Top assignees: Samsung Electronics Co., Ltd., Electronics and Telecommunications Research Institute, Dong-A St Co., Ltd.. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Hoon Choi. Retrieved from https://idiyas.com/inventor/ji-hoon-choi-lofbaoa6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 35 

% Patents Active = 91.4



Average Co-Inventor Count = 5.3

ph-index = 5

Forward Citations = 107(Granted Patents)


Location History:

  • Gyeongsangnam-Do, KR (2008)
  • Changnyung-gun, KR (2008)
  • Suwon-si, KR (2011)
  • Daejeon, KR (2011 - 2013)
  • Gyeonggi-do, KR (2014 - 2018)
  • Yongin-si, KR (2021)
  • Seongnam-si, KR (2012 - 2024)

Company Filing History:


Years Active: 2008-2026

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Areas of Expertise:
Three-Dimensional Memory
Vertical Memory Devices
Semiconductor Fabrication
Nonvolatile Memory
Polysilicon Layer
Channel Doping
Substrate Processing
Antibacterial Agents
MIMO Systems
Digital Broadcasting
35 patents (USPTO):Explore Patents

Title: Innovations and Achievements of Ji-Hoon Choi

Introduction

Ji-Hoon Choi, a distinguished inventor based in Seongnam-si, South Korea, holds an impressive portfolio of 29 patents primarily in the field of semiconductor technology. His innovative contributions have significantly advanced the development and functionality of three-dimensional semiconductor devices.

Latest Patents

Among his latest patents are groundbreaking inventions such as a three-dimensional semiconductor memory device. This device features a first source conductive pattern made from a polycrystalline material, where the grain size of the first crystal grains is smaller than that of the second crystal grains of the substrate material. Furthermore, the device includes a stack of gate electrodes arranged atop the source conductive pattern, along with a vertical channel that integrates this stack with the first source conductive pattern.

In addition, his patent for a vertical memory device comprises a channel connecting pattern on a substrate, where gate electrodes are strategically spaced apart in a specified direction. This unique arrangement optimizes the channel extension, thus enhancing the interaction between the gate electrodes and the substrate, ultimately improving overall memory device performance.

Career Highlights

Ji-Hoon Choi's career includes notable tenures at prominent companies such as Samsung Electronics and Seo Won Korea. His roles within these organizations have allowed him to push the boundaries of semiconductor innovation, showcasing his expertise and commitment to advancing technology.

Collaborations

Throughout his career, Ji-Hoon Choi has collaborated with talented individuals, including coworkers Seulye Kim and Sunggil Kim. Their collective efforts in research and development have undoubtedly contributed to the successful realization of several of Ji-Hoon's patents.

Conclusion

With a robust portfolio of 29 patents, Ji-Hoon Choi continues to be a pioneering force in the semiconductor industry. His latest inventions illustrate his ability to bring forward innovative solutions that enhance semiconductor technology, confirming his rightful place among leading inventors in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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