The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
May. 17, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sunggil Kim, Yongin-si, KR;
Sangsoo Lee, Seoul, KR;
Seulye Kim, Seoul, KR;
Hongsuk Kim, Yongin-si, KR;
Jintae Noh, Yongin-si, KR;
Ji-Hoon Choi, Seongnam-si, KR;
Jaeyoung Ahn, Seongnam-si, KR;
Sanghoon Lee, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor memory device has a plurality of gates vertically stacked on a top surface of a substrate, a vertical channel filling a vertical hole that extends vertically through the plurality of gates, and a memory layer in the vertical hole and surrounding the vertical channel. The vertical channel includes a bracket-shaped lower portion filling part of a recess in the top of the substrate and an upper portion extending vertically along the vertical hole and connected to the lower channel. At least one end of an interface between the lower and upper portions of the vertical channel is disposed at a level not than that of the top surface of the substrate.