The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Jul. 19, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ji-Hoon Choi, Seongnam-si, KR;
Sung-Gil Kim, Yongin-si, KR;
Jung-Hwan Kim, Seoul, KR;
Chan-Hyoung Kim, Suwon-si, KR;
Woo-Sung Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A vertical memory device may include a channel connecting pattern on a substrate, gate electrodes spaced apart from each other in a first direction on the channel connecting pattern, and a channel extending in the first direction through the gate electrodes and the channel connecting pattern. Each of the electrodes may extend in a second direction substantially parallel to an upper surface of the substrate, and the first direction may be substantially perpendicular to the upper surface of the substrate. An end portion of the channel connecting pattern in a third direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the second direction may have an upper surface higher than an upper surface of other portions of the channel connecting pattern except for a portion thereof adjacent the channel.