The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Jul. 11, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ji-Hoon Choi, Seongnam-si, KR;
Sunggil Kim, Yongin-si, KR;
Seulye Kim, Seoul, KR;
Hongsuk Kim, Yongin-si, KR;
Phil Ouk Nam, Suwon-si, KR;
Jaeyoung Ahn, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A three-dimensional semiconductor device includes gate electrodes sequentially stacked on a substrate, a channel structure penetrating the gate electrodes and being connected to the substrate, an insulating gap-fill pattern provided within the channel structure and surrounded by the channel structure as viewed in a plan view, and a conductive pattern on the insulating gap-fill pattern. At least a portion of the insulating gap-fill pattern is received in the conductive pattern, and at least a portion of the conductive pattern is interposed between at least that portion of the insulating gap-fill pattern and the channel structure.