IDiyas

For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Jeong-Dong Choe

USPTO Granted Patents = 40 

Average Co-Inventor Count = 4.9

ph-index = 11

Forward Citations = 518(Granted Patents)


Inventors with similar research interests:


Location History:

  • Gyeonggi-do, KR (2005 - 2013)
  • Anyang-si, KR (2011 - 2014)

Company Filing History:

goldMedal40 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2014

where 'Filed Patents' based on already Granted Patents

40 patents (USPTO):
1. 8652928 - Method of manufacturing a semiconductor device (2014-02-18),
2. 8466511 - Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the same (2013-06-18),
3. 8460508 - Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device (2013-06-11),
4. 8426272 - Non-volatile memory devices including shared bit lines and methods of fabricating the same (2013-04-23),
5. 8330205 - Nonvolatile semiconductor device including a floating gate and associated systems (2012-12-11),
6. 8178408 - Methods of manufacturing charge trap-type non-volatile memory devices (2012-05-15),
7. 8059469 - Semiconductor device including driving transistors (2011-11-15),
8. 8049269 - Non-volatile memory device and method of manufacturing the same (2011-11-01),
9. 8039905 - Semiconductor device (2011-10-18),
10. 7902024 - Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems (2011-03-08),
11. 7883969 - Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same (2011-02-08),
12. 7871914 - Methods of fabricating semiconductor devices with enlarged recessed gate electrodes (2011-01-18),
13. 7670912 - Methods of fabricating multichannel metal oxide semiconductor (MOS) transistors (2010-03-02),
14. 7615429 - Methods of fabricating field effect transistors having multiple stacked channels (2009-11-10),
15. 7575964 - Semiconductor device employing buried insulating layer and method of fabricating the same (2009-08-18),

Title: Innovations and Contributions of Jeong-Dong Choe in Semiconductor Technology

Introduction

Jeong-Dong Choe is a notable inventor based in Gyeonggi-do, South Korea, with an impressive portfolio of 40 patents. His groundbreaking innovations have significantly advanced the field of semiconductor technology, particularly in the design and manufacturing of semiconductor devices.

Latest Patents

Among his latest patents, two stand out for their technical ingenuity. The first patent pertains to a method of manufacturing a semiconductor device that comprises a substrate with distinct areas, transistors, and an isolation layer facilitating enhanced functionality. The second patent focuses on vertical channel fin field-effect transistors (FinFET), where the design includes a fin-shaped active region with improved source/drain contact areas. This innovation allows for more efficient fabrication methodologies while ensuring optimal device performance.

Career Highlights

Jeong-Dong Choe plays a pivotal role at Samsung Electronics Co., Ltd., where he develops cutting-edge technologies within the semiconductor division. His contributions are instrumental in enhancing the efficiency and performance of electronic devices, reinforcing Samsung's position as a leader in the industry.

Collaborations

Throughout his career, Choe has worked closely with talented colleagues, notably Dong-Gun Park and Shin-Ae Lee. Their collaborative efforts have fostered an environment of innovation, leading to advancements in semiconductor technology and the development of novel manufacturing techniques.

Conclusion

In conclusion, Jeong-Dong Choe’s contributions to the field of semiconductors are marked by his innovative patents and collaborative work at Samsung Electronics Co., Ltd. His ongoing efforts continue to shape the future of technology, making significant impacts in the industry and beyond.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…