The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2011
Filed:
Apr. 21, 2008
Chang-woo OH, Gyeonggi-do, KR;
Dong-gun Park, Gyeonggi-do, KR;
Sung-young Lee, Gyeonggi-do, KR;
Chang-sub Lee, Gyeonggi-do, KR;
Jeong-dong Choe, Gyeonggi-do, KR;
Chang-Woo Oh, Gyeonggi-do, KR;
Dong-Gun Park, Gyeonggi-do, KR;
Sung-Young Lee, Gyeonggi-do, KR;
Chang-Sub Lee, Gyeonggi-do, KR;
Jeong-Dong Choe, Gyeonggi-do, KR;
Abstract
Unit cells of metal oxide semiconductor (MOS) transistors are provided having an integrated circuit substrate and a MOS transistor on the integrated circuit substrate. The MOS transistor includes a source region, a drain region and a gate. The gate is between the source region and the drain region. A channel region is provided between the source and drain regions. The channel region has a recessed region that is lower than bottom surfaces of the source and drain regions. Related methods of fabricating transistors are also provided.