Chang-Sub Lee

USPTO Granted Patents = 35 (Patent Applications = 2)

Average Co-Inventor Count = 4.4

ph-index = 10

Forward Citations = 344(Granted Patents)

Location History:

Seoul, KR (1999 - 2001)
Suwon, KR (2004 - 2005)
Suwon-si, KR (2005 - 2008)
Gyeongsangbuk-do, KR (2010)
Gyeonggi-do, KR (2005 - 2012)
Andong-si, KR (2013)

Company Filing History:

34 out of 131,214

Samsung Electronics Co., Ltd.

patents

1 out of 7,636

Samsung Sdi Co., Inc.

patents

Years Active: 1999-2013

where 'Filed Patents' based on already Granted Patents

35 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8456918 - NAND flash memory device and method of operating same to reduce a difference between channel potentials therein (2013-06-04),

2. 8324052 - Methods of fabricating non-volatile memory devices including double diffused junction regions (2012-12-04),

3. 7898039 - Non-volatile memory devices including double diffused junction regions (2011-03-01),

4. 7883969 - Metal oxide semiconductor field effect transistors (MOSFETs) including recessed channel regions and methods of fabricating the same (2011-02-08),

5. 7871914 - Methods of fabricating semiconductor devices with enlarged recessed gate electrodes (2011-01-18),

6. 7787306 - Nonvolatile semiconductor memories for preventing read disturbance and reading methods thereof (2010-08-31),

7. 7741143 - Image sensor having 3-dimensional transfer transistor and its method of manufacture (2010-06-22),

8. 7615429 - Methods of fabricating field effect transistors having multiple stacked channels (2009-11-10),

9. 7541656 - Semiconductor devices with enlarged recessed gate electrodes (2009-06-02),

10. 7534707 - MOS Transistors having inverted T-shaped gate electrodes and fabrication methods thereof (2009-05-19),

11. 7494871 - Semiconductor memory devices and methods for forming the same (2009-02-24),

12. 7462544 - Methods for fabricating transistors having trench gates (2008-12-09),

13. 7397131 - Self-aligned semiconductor contact structures (2008-07-08),

14. 7381601 - Methods of fabricating field effect transistors having multiple stacked channels (2008-06-03),

15. 7326975 - Buried channel type transistor having a trench gate and method of manufacturing the same (2008-02-05),

Title: Chang-Sub Lee: A Pioneer in NAND Flash Memory Technology

Introduction

Chang-Sub Lee is a prominent inventor from Gyeonggi-do, South Korea, known for his significant contributions to the field of NAND flash memory technology. With a remarkable portfolio of 35 patents, he has played a crucial role in advancing memory device innovation, making notable impacts in both academic and industrial sectors.

Latest Patents

One of Chang-Sub Lee's latest patents focuses on a NAND flash memory device and method of operating the device to reduce channel potential differences. This innovative device consists of a block of NAND cell units, each controlled by multiple wordlines. By applying specific programming and cutoff voltages, Lee's invention effectively mitigates potential errors associated with excessive channel voltage increases. Another notable patent involves methods of fabricating non-volatile memory devices, emphasizing the use of impurity regions to enhance memory cell gates' performance. These inventions showcase Lee's technical acumen and dedication to improving memory devices' efficiency and reliability.

Career Highlights

Throughout his career, Chang-Sub Lee has worked with leading technology companies, notably Samsung Electronics Co., Ltd. and Samsung SDI Co., Inc. His experience with these major organizations has allowed him to push the boundaries of NAND flash memory technology and significantly influence the industry.

Collaborations

Chang-Sub Lee has collaborated with esteemed colleagues, including Dong-Gun Park and Jeong-Dong Choe. These partnerships have fostered an environment of innovation, combining their expertise to create groundbreaking advancements in memory devices.

Conclusion

Chang-Sub Lee stands as a beacon of innovation in NAND flash memory technology. His extensive patent portfolio and collaborative efforts with industry-leading companies and talented coworkers underline his commitment to advancing memory solutions. As technology continues to evolve, Lee's contributions will undoubtedly leave a lasting legacy in the realms of inventions and innovations.

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