Jean Massies

This inventor holds 12 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignees: Centre National De La Recherche Scientifique, Thomson-Csf, Picogiga International Sas. Active years: 1979-2019.

USPTO Granted Patents = 12 (Patent Applications = 1)

% Patents Active = 91.7

EPO Patents = 2 (Patent Applications = 4)

Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 77(Granted Patents)

Location History:

Paris, FR (1979 - 1980)
Valbonne, FR (1996 - 2019)

Company Filing History:

6 out of 5,383

Centre National De La Recherche Scientifique

Picogiga International Sas

Years Active: 1979-2019

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10522346 - Production of a semiconductor support based on group III nitrides (2019-12-31),

2. 10361077 - Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure (2019-07-23),

3. 8470618 - Method of manufacturing a light-emitting diode having electrically active and passive portions (2013-06-25),

4. 7785991 - Process for integrating a III-N type component on a (001) nominal silicium substrate (2010-08-31),

5. 7776154 - Preparation method of a coating of gallium nitride (2010-08-17),

6. 7767307 - Preparation method of a coating of gallium nitride (2010-08-03),

7. 7273664 - Preparation method of a coating of gallium nitride (2007-09-25),

8. 6730943 - Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device (2004-05-04),

9. 6445009 - Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings (2002-09-03),

10. 5506418 - Electromagnetic wave detector with quantum well structure (1996-04-09),

11. 4211587 - Process for producing a metal to compound semiconductor contact having a (1980-07-08),

12. 4160166 - System for regulating molecular flux and its application to (1979-07-03),

Title: The Innovations of Jean Massies

Introduction

Jean Massies is a notable inventor based in Valbonne, France. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work primarily focuses on the production of semiconductor structures based on group III nitrides, which are essential for various electronic applications.

Latest Patents

Among his latest patents, one invention relates to the production of a semiconductor support based on group III nitrides. This method involves several steps to create a support for semiconductor structures, enhancing their performance and reliability. Another significant patent details a method for producing a passivated semiconductor structure based on group III nitrides. This method includes depositing a crystalline passivation layer that continuously covers the entire surface of the semiconductor layer, which is crucial for improving the efficiency of electronic devices.

Career Highlights

Throughout his career, Jean Massies has worked with prestigious organizations such as the National Centre for Scientific Research (Centre National De La Recherche Scientifique) and Thomson-CSF. His experience in these institutions has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

Jean has collaborated with notable colleagues, including Fabrice Semond and Nicolas Pierre Grandjean. Their combined expertise has contributed to advancements in the field of semiconductor research.

Conclusion

Jean Massies is a prominent figure in semiconductor innovation, with a strong portfolio of patents that reflect his dedication to advancing technology. His contributions continue to influence the development of efficient electronic devices.