The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 1996
Filed:
Mar. 21, 1995
Applicant:
Inventors:
Philippe Bois, Cesson, FR;
Emmanuel Rosencher, Bagneux, FR;
Borge Vinter, Paris, FR;
Jean Massies, Valbonne, FR;
Gerard Neu, Valbonne, FR;
Nicolas Grandjean, Mougins, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 15 ; 257 17 ; 257 18 ; 257 21 ; 257 22 ;
Abstract
An electromagnetic wave detector formed of semiconductor materials includes at least one quantum well in which there is provided a fine layer of a material with a gap width that is smaller than that of the quantum well layer. For example, in the case of a GaAlAs/GaAs/GaAlAs, there is provision for a fine layer of InAs. In this way, the difference of energy levels between the two permitted levels is increased and detection of short wavelengths may be accomplished.