The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2002

Filed:

Aug. 08, 2000
Applicant:
Inventors:

Nicolas Pierre Grandjean, Nice, FR;

Jean Massies, Valbonne, FR;

Benjamin Gérard Pierre Damilano, Mougins, FR;

Fabrice Semond, Mougins le Haut, FR;

Mathieu Leroux, Grasse, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/715 ;
U.S. Cl.
CPC ...
H01L 2/715 ;
Abstract

A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.


Find Patent Forward Citations

Grandjean, Nicolas. (2002). Stacking of gan or gainn quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings (U.S. Patent No. 6445009). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6445009

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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