Fabrice Semond

This inventor holds 7 USPTO granted patents and 1 published patent application, plus 1 CIPO patent and 4 EPO patents. Top assignees: Centre National De La Recherche Scientifique, Picogiga International Sas, STMicroelectronics. Active years: 2002-2019.

USPTO Granted Patents = 7 (Patent Applications = 1)

% Patents Active = 100.0

CIPO Patents = 1

EPO Patents = 4 (Patent Applications = 1)

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 30(Granted Patents)

Location History:

Mougins le Haut, FR (2002 - 2010)
Cannes, FR (2019)

Company Filing History:

4 out of 5,383

Centre National De La Recherche Scientifique

patents

2 out of 2

Picogiga International Sas

Years Active: 2002-2019

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7 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10522346 - Production of a semiconductor support based on group III nitrides (2019-12-31),

2. 10361077 - Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure (2019-07-23),

3. 7785991 - Process for integrating a III-N type component on a (001) nominal silicium substrate (2010-08-31),

4. 7776154 - Preparation method of a coating of gallium nitride (2010-08-17),

5. 7767307 - Preparation method of a coating of gallium nitride (2010-08-03),

6. 7273664 - Preparation method of a coating of gallium nitride (2007-09-25),

7. 6445009 - Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings (2002-09-03),

Title: Fabrice Semond: Innovator in Semiconductor Technology

Introduction

Fabrice Semond is a notable inventor based in Mougins, France. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work primarily focuses on the production of semiconductor structures based on group III nitrides.

Latest Patents

One of his latest patents is related to the production of a semiconductor support based on group III nitrides. This invention outlines a method for producing a support that is essential for creating semiconductor structures. The method includes specific steps that enhance the efficiency of the production process. Another significant patent involves a method for producing a passivated semiconductor structure based on group III nitrides. This invention details a process that includes depositing a crystalline passivation layer that covers the entire surface of a layer based on group III nitrides. The crystalline passivation layer is formed from a precursor containing silicon atoms and nitrogen atoms, resulting in a structure that exhibits unique diffraction properties.

Career Highlights

Fabrice Semond has worked with esteemed organizations such as the Centre National De La Recherche Scientifique and Picogiga International SAS. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Throughout his career, Fabrice has collaborated with notable professionals in the field, including Jean Massies and Nicolas Pierre Grandjean. These collaborations have further enriched his research and development efforts.

Conclusion

Fabrice Semond is a distinguished inventor whose work in semiconductor technology has led to several important patents. His innovative methods and collaborations continue to influence the field significantly.