Centre National De La Recherche Scientifique

Picogiga International Sas

Stmicroelectronics S.a.

Université Paris—sud

Centre National De La Recherche Scientifique-cnrs

Fabrice Semond

Jean Massies

Nicolas Pierre Grandjean

Sylvain Joblot

Philippe Boucaud

Eric Frayssinet

Jean-Yves Duboz

Benjamin G&eacute;rard Pierre Damilano

Yvon Cordier

Mathieu Leroux

Jean Claude Massies

The invention relates to a method for producing a support for the production of a semiconductor structure based on group III nitrides, characterised in that the method comprises the steps of: The invention also relates to a support obtained by the method, to a semiconductor structure based on the support, and to the method for the production thereof.

Production of a semiconductor support based on group III nitrides

The invention relates to a method for producing a semiconductor structure, characterized in that the method comprises a step () of depositing a crystalline passivation layer continuously covering the entire surface of a layer based on group III nitrides, said crystalline passivation layer, which is deposited from a precursor containing silicon atoms and a flow of nitrogen atoms, consisting of silicon atoms bound to the surface of the layer based on group III nitrides and arranged in a periodical arrangement such that a diffraction image of said crystalline passivation layer obtained by grazing-incidence diffraction of electrons in the direction [1-100] comprises:

Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure

A process is provided for integrating a III-N component, such as GaN, on a (001) or (100) nominal silicon substrate. There are arranged a texture of elementary areas each comprising an individual surface, with the texture comprising at least one hosting area intended to receive a III-N component. A mask layer is deposited on non-hosting areas which are not intended to receive a III-N type component. The hosting area is locally prepared so as to generate on the surface of the area one domain comprising one single type of terrace. There is grown by Molecular Beam Epitaxy or Metalorganic Vapor Phase Epitaxy on the hosting area one intermediary AlN buffer layer, followed by the growth of one III-N based material so as to realize a substantially monocrystalline structure. There is eliminated the mask layer located on non-hosting areas as well as surface polycrystalline layers deposited above the mask layers, and MOS/CMOS structures are subsequent integrated on at least some of the non-hosting areas.

Process for integrating a III-N type component on a (001) nominal silicium substrate

The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a monocrystalline layer of a material having a thickness ranging between 100 and 300 nm, preferably between 200 and 250 nm, and whereof crystal lattice parameter is less than the crystal lattice parameter of the gallium nitride or of the mixed gallium nitride with another metal, is inserted in the coating of gallium nitride or mixed gallium nitride with another metal. The invention also concerns the method for preparing said coating. The invention further concerns electronic and optoelectronic devices comprising said coating.

Preparation method of a coating of gallium nitride

A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.

Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings

Growing community of inventors

Mougins le Haut, France

Fabrice Semond