The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Jan. 21, 2016
Applicant:
Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02505 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 21/02532 (2013.01); H01L 21/02609 (2013.01); H01L 21/02631 (2013.01); H01L 29/778 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01);
Abstract
The invention relates to a method for producing a support for the production of a semiconductor structure based on group III nitrides, characterised in that the method comprises the steps of: The invention also relates to a support obtained by the method, to a semiconductor structure based on the support, and to the method for the production thereof.