This inventor holds 3 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: Centre National De La Recherche Scientifique, Soitec. Active years: 2015-2019.
Location History:
- Paris, FR (2015)
- Mouans Sartoux, FR (2019)
Company Filing History:
3 out of 5,383 
1 out of 535 
Years Active: 2015-2019
Title: Eric Frayssinet: Innovator in Semiconductor Technology
Introduction
Eric Frayssinet is a notable inventor based in Mouans Sartoux, France. He has made significant contributions to the field of semiconductor technology, particularly focusing on group III nitrides. With a total of 3 patents to his name, Frayssinet's work has advanced the understanding and production of semiconductor structures.
Latest Patents
Frayssinet's latest patents include innovative methods for producing semiconductor supports and structures based on group III nitrides. One of his patents details a method for producing a support for semiconductor structures, which involves specific steps to ensure the quality and efficiency of the support. Another patent focuses on a method for producing a passivated semiconductor structure, characterized by the deposition of a crystalline passivation layer that enhances the performance of the semiconductor.
Career Highlights
Throughout his career, Eric Frayssinet has worked with esteemed organizations such as the National Center for Scientific Research (Centre National De La Recherche Scientifique) and Soitec. His experience in these institutions has allowed him to collaborate on groundbreaking research and development projects in the semiconductor industry.
Collaborations
Frayssinet has collaborated with notable colleagues, including Fabrice Semond and Jean Massies. These partnerships have contributed to the advancement of semiconductor technologies and have fostered innovation in the field.
Conclusion
Eric Frayssinet's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor structures and methods.