The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Jun. 28, 2012
David Schenk, Bernin, FR;
Alexis Bavard, Limeil Brevannes, FR;
Yvon Cordier, Paris, FR;
Eric Frayssinet, Paris, FR;
Mark Kennard, Crolles, FR;
Daniel Rondi, Limeil Brevannes, FR;
David Schenk, Bernin, FR;
Alexis Bavard, Limeil Brevannes, FR;
Yvon Cordier, Paris, FR;
Eric Frayssinet, Paris, FR;
Mark Kennard, Crolles, FR;
Daniel Rondi, Limeil Brevannes, FR;
Soitec, Bernin, FR;
Centre National de la Recherche Scientifique (CNRS), Paris, FR;
Abstract
The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of BAlGaInN, (c2) growth of a layer of BAlGaInN, (c3) growth of an intermediate layer of BAlGaInN, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN.