This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Centre National De La Recherche Scientifique, Soitec. Active years: 2015.
Company Filing History:
1 out of 5,383 
1 out of 535 
Years Active: 2015
Title: Yvon Cordier: Innovator in Gallium Nitride Technology
Introduction
Yvon Cordier is a notable inventor based in Paris, France. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of gallium nitride (GaN) layers. His innovative methods have implications for various applications in electronics and optoelectronics.
Latest Patents
Yvon Cordier holds a patent for a method of manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate. The patent describes a process that involves several steps, including three-dimensional epitaxial growth of a relaxed GaN layer and the growth of intermediate layers of BAlGaInN. This method is crucial for creating monocrystalline layers of GaN, which are essential for high-performance electronic devices.
Career Highlights
Throughout his career, Yvon Cordier has worked with prominent organizations such as Soitec and the National Center for Scientific Research (Centre National De La Recherche Scientifique). His work has been instrumental in advancing the understanding and application of GaN technology in various industries.
Collaborations
Yvon Cordier has collaborated with notable colleagues, including David Schenk and Alexis Bavard. These partnerships have contributed to the development of innovative solutions in the field of semiconductor manufacturing.
Conclusion
Yvon Cordier's contributions to gallium nitride technology and his innovative patent demonstrate his significant role in the advancement of semiconductor applications. His work continues to influence the industry and pave the way for future innovations.