Centre National De La Recherche Scientifique

Soitec

Eric Frayssinet

Jean Massies

Fabrice Semond

Mark Kennard

Alexis Bavard

Yvon Cordier

David Schenk

Daniel Rondi

The invention relates to a method for producing a support for the production of a semiconductor structure based on group III nitrides, characterised in that the method comprises the steps of: The invention also relates to a support obtained by the method, to a semiconductor structure based on the support, and to the method for the production thereof.

Production of a semiconductor support based on group III nitrides

The invention relates to a method for producing a semiconductor structure, characterized in that the method comprises a step () of depositing a crystalline passivation layer continuously covering the entire surface of a layer based on group III nitrides, said crystalline passivation layer, which is deposited from a precursor containing silicon atoms and a flow of nitrogen atoms, consisting of silicon atoms bound to the surface of the layer based on group III nitrides and arranged in a periodical arrangement such that a diffraction image of said crystalline passivation layer obtained by grazing-incidence diffraction of electrons in the direction [1-100] comprises:

Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure

The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of BAlGaInN, (c2) growth of a layer of BAlGaInN, (c3) growth of an intermediate layer of BAlGaInN, at least one of the layers formed in steps (c1) to (c3) being an at least ternary III-N alloy comprising aluminium and gallium, (d) growth of said layer of GaN.

Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method

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Mouans Sartoux, France

Eric Frayssinet