The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 1980
Filed:
Dec. 29, 1978
Applicant:
Inventors:
Jean Massies, Paris, FR;
Tronc L Nuyen, Paris, FR;
Assignee:
Thomson-CSF, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148187 ; 148-15 ; 357 15 ; 427 84 ;
Abstract
A process for producing a 'metal to compound semiconductor' contact having a potential barrier of predetermined height. By this is meant a Schottky contact or an ohmic contact. The process comprises, before deposition of the metal, perfectly cleaning the semiconductor so as to remove in particular oxygen, then depositing sulphur or selenium on its surface by the action of hydrogen sulphide or hydrogen selenide, and, after deposition of the metal, effecting a heat treatment of the contact. In this way, an ohmic contact is obtained. The Schottky contact is obtained by the action of hydrogen sulphide or hydrogen selenide and then pure oxygen at very low pressure.