Kanagawa, Japan

Isamu Hijikata

This inventor holds 17 USPTO granted patents. Top assignees: Tokyo Ohka Kogyo Co., Ltd., Tokyo Denshi Kagaku Co., Ltd., Tokyo Denshi Kagaku Kabushiki Kaisha. Active years: 1982-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Isamu Hijikata. Retrieved from https://idiyas.com/inventor/isamu-hijikata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 11

Forward Citations = 443(Granted Patents)


Location History:

  • Sagamihara, JP (1984)
  • Tokyo, JP (1982 - 1986)
  • Kanagawa, JP (1987 - 1996)

Company Filing History:


Years Active: 1982-1996

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17 patents (USPTO):Explore Patents

Title: Isamu Hijikata: Innovator in Semiconductor Technology

Introduction

Isamu Hijikata is a prominent inventor based in Kanagawa, Japan, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Hijikata has developed innovative solutions that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

One of his latest patents is an object handling device designed to successively transfer objects such as semiconductor wafers. This device features first and second collapsible arm units equipped with hands for holding objects. It includes a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for the same purpose with the second arm unit, and a third drive shaft that allows for turning both arm units while maintaining their relative positional relationship. The actuator mechanism enables independent angular movement of the drive shafts about their own axes.

Another notable patent is related to plasma taper etching for semiconductor device fabrication. This plasma processing apparatus contains a chamber that houses both a plasma processing region and a plasma generating region. When a semiconductor wafer with surface irregularities is placed in the processing region, a plasma is generated using a processing gas primarily composed of argon. This process etches the corner edges of the lands of the object into a taper shape, while the material removed is deposited between the lands.

Career Highlights

Throughout his career, Isamu Hijikata has worked with notable companies such as Tokyo Ohka Kogyo Co., Ltd. and Tokyo Ohka Kogyo Kabushiki Kaisha. His work in these organizations has significantly advanced the field of semiconductor technology.

Collaborations

He has collaborated with esteemed colleagues, including Akira Uehara and Hisashi Nakane, contributing to various projects that have furthered innovation in the industry.

Conclusion

Isamu Hijikata's contributions to semiconductor technology through his patents and collaborations have made a lasting impact on the field. His innovative solutions continue to influence the manufacturing processes of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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