The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 1986

Filed:

Sep. 10, 1984
Applicant:
Inventors:

Isamu Hijikata, Tokyo, JP;

Akira Uehara, Kanagawa, JP;

Hisashi Nakane, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ; H01L / ;
U.S. Cl.
CPC ...
2191 / ; 2191 / ; 156345 ; 156646 ; 204298 ; 2041 / ;
Abstract

A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.


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