The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1993
Filed:
Sep. 23, 1991
Applicant:
Inventors:
Isamu Hijikata, Kanagawa, JP;
Kazutoshi Fujisawa, Kanagawa, JP;
Assignee:
Tokyo Ohka Kogyo Co., Ltd., , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C23F / ;
U.S. Cl.
CPC ...
156643 ; 156345 ; 156656 ; 156657 ; 1566591 ;
Abstract
A plasma processing apparatus has a chamber which houses therein a plasma processing region and a plasma generating region spaced therefrom. An object such as a semiconductor wafer, which has surface irregularities including lands, is placed in the plasma processing region. When a plasma is generated in the plasma generating region with a processing gas composed mainly of an argon gas being introduced into the chamber, the corner edges of the lands of the object are etched into a taper shape, and the material etched away from the object is deposited between the lands.