Kanagawa, Japan

Kazutoshi Fujisawa


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1993-1994

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2 patents (USPTO):Explore Patents

Title: Kazutoshi Fujisawa: Innovator in Plasma Processing Technology

Introduction

Kazutoshi Fujisawa is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of plasma processing technology, particularly in the semiconductor industry. With a total of 2 patents, his work has advanced the methods used in semiconductor fabrication.

Latest Patents

Fujisawa's latest patents include a "Method of and apparatus for processing a workpiece in plasma" and "Plasma taper etching for semiconductor device fabrication." The first patent describes an electron cyclotron resonance plasma chemical vapor deposition system that features a reaction chamber for introducing a reaction gas. This system includes a table for supporting a semiconductor wafer and utilizes a microwave oscillator to generate plasma for etching or depositing films on the wafer. The second patent focuses on a plasma processing apparatus that etches the corner edges of semiconductor wafers into a taper shape, enhancing the fabrication process.

Career Highlights

Kazutoshi Fujisawa is associated with Tokyo Ohka Kogyo Co., Ltd., a company known for its innovations in the semiconductor materials sector. His work has been instrumental in developing advanced plasma processing techniques that are crucial for modern semiconductor manufacturing.

Collaborations

Fujisawa has collaborated with notable colleagues such as Kazuto Obuchi and Satoshi Oya, contributing to various projects that push the boundaries of plasma technology.

Conclusion

Kazutoshi Fujisawa's contributions to plasma processing technology have made a lasting impact on the semiconductor industry. His innovative patents and collaborations highlight his role as a key figure in advancing semiconductor fabrication techniques.

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