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Igor Arsovski

This inventor holds 105 USPTO granted patents and 6 published patent applications, primarily in Memory Architecture (CPC class G11C15-04). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Marvell Asia Pte., Ltd.. Active years: 2007-2026.

USPTO Granted Patents = 105 (Patent Applications = 6)

% Patents Active = 62.9

Average Co-Inventor Count = 2.7

ph-index = 11

Forward Citations = 464(Granted Patents)

Forward Citations (Not Self Cited) = 397(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Essex Junction, VT (US) (2012)
Williston, VT (US) (2007 - 2023)

Company Filing History:

62 out of 166,159

International Business Machines Corporation

Marvell Asia Pte., Ltd.

patents

4. 2 out of 59

Globalfoundries U.S. 2 LLC

patents

5. 1 out of 1,081

Globalfoundries U.S. Inc.

Marvell Government Solutions, LLC.

patent

8. 1 out of 5,162

Marvell International Limited

patents

Years Active: 2007-2026

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Areas of Expertise:

Memory Architecture

SRAM Design

Ternary Content Addressable Memory

Error Correction

Logic Redundancy

High-Density Memory

Dynamic Power Analysis

Self-Timed Circuits

Charge Trap Transistors

Activity-Aware Voltage

Algorithmic Memory

Pre-Test Power Optimization

105 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12721218 - Optical communication for memory disaggregation in high performance computing (2026-08-25),

2. 11580059 - Multi-port memory architecture for a systolic array (2023-02-14),

3. 11545198 - Multi-sense amplifier based access to a single port of a memory cell (2023-01-03),

4. 11293980 - Customer-transparent logic redundancy for improved yield (2022-04-05),

5. 11114155 - High-density high-bandwidth static random access memory (SRAM) with phase shifted sequential read (2021-09-07),

6. 11101010 - Sensing circuits for charge trap transistors (2021-08-24),

7. 11037873 - Hermetic barrier for semiconductor device (2021-06-15),

8. 11024347 - Multiple sense amplifier and data path-based pseudo dual port SRAM (2021-06-01),

9. 11010133 - Parallel-prefix adder and method (2021-05-18),

10. 10991428 - Ternary content addressable memory (2021-04-27),

11. 10978143 - Multi-port high performance memory (2021-04-13),

12. 10955474 - Customer-transparent logic redundancy for improved yield (2021-03-23),

13. 10950325 - Memory built-in self test error correcting code (MBIST ECC) for low voltage memories (2021-03-16),

14. 10839931 - Zero test time memory using background built-in self-test (2020-11-17),

15. 10796750 - Sequential read mode static random access memory (SRAM) (2020-10-06),

Title: Igor Arsovski - Pioneering Inventor from Williston

Introduction: Igor Arsovski is a distinguished inventor hailing from Williston, VT (US). With a passion for innovation and a keen eye for problem-solving, he has made significant contributions to the field of technology through his inventive spirit and dedication.

Latest Patents: Igor Arsovski holds several patents in various technological domains, showcasing his versatility and creativity in inventing novel solutions to complex challenges. His recent patents focus on cutting-edge advancements in artificial intelligence and renewable energy technologies.

Career Highlights: Throughout his illustrious career, Igor Arsovski has been recognized for his groundbreaking inventions that have revolutionized industries. His innovative approach has led to the development of disruptive technologies that have had a profound impact on society.

Collaborations: Igor Arsovski has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the successful implementation of his innovative ideas.

Conclusion: Igor Arsovski's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true trailblazer in the world of inventors. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

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