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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Hwong-Kwo Lin

USPTO Granted Patents = 26

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 123(Granted Patents)


Location History:

  • Palo Alto, CA (US) (2008 - 2019)
  • Santa Clara, CA (US) (2015 - 2020)

Company Filing History:

goldMedal26 out of 5,406 
 
Nvidia Corporation
 patents

Years Active: 2008-2020

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26 patents (USPTO):
1. 10672461 - Write assist negative bit line voltage generator for SRAM array (2020-06-02),
2. 10181842 - Mixed threshold flip-flop element to mitigate hold time penalty due to clock distortion (2019-01-15),
3. 9842631 - Mitigating external influences on long signal lines (2017-12-12),
4. 9542992 - SRAM core cell design with write assist (2017-01-10),
5. 9525401 - Low clocking power flip-flop (2016-12-20),
6. 9496047 - Memory cell and memory (2016-11-15),
7. 9484115 - Power savings via selection of SRAM power source (2016-11-01),
8. 9390788 - Configurable delay circuit and method of clock buffering (2016-07-12),
9. 9355710 - Hybrid approach to write assist for memory array (2016-05-31),
10. 9219480 - Low tau synchronizer flip-flop with dual loop feedback approach to improve mean time between failure (2015-12-22),
11. 9183922 - Eight transistor (8T) write assist static random access memory (SRAM) cell (2015-11-10),
12. 9123438 - Configurable delay circuit and method of clock buffering (2015-09-01),
13. 9110141 - Flip-flop circuit having a reduced hold time requirement for a scan input (2015-08-18),
14. 8988123 - Small area low power data retention flop (2015-03-24),
15. 8866528 - Dual flip-flop circuit (2014-10-21),

Title: Innovations of Hwong-Kwo Lin: A Pioneer in SRAM and Flip-Flop Technologies

Introduction

Hwong-Kwo Lin, based in Palo Alto, California, is a renowned inventor with an impressive portfolio comprising 26 patents. His innovative solutions have significantly contributed to advancements in memory technologies, particularly in the realm of static random access memory (SRAM) and flip-flop systems.

Latest Patents

Among his latest patents, one notable invention is the "Write assist negative bit line voltage generator for SRAM array." This system enhances the write operations of SRAM cells by utilizing a negative bit line voltage, effectively manipulating distributed capacitance through a write assist command. The result is improved efficiency during memory write cycles.

Another significant patent is the "Mixed threshold flip-flop element to mitigate hold time penalty due to clock distortion." This invention incorporates FinFET technology transistors with varying threshold voltage levels, optimizing performance in terms of speed and power consumption. By balancing high voltage thresholds in the data input path with standard voltage thresholds in the clock input, the flip-flop element achieves faster switch times and improved reliability.

Career Highlights

Hwong-Kwo Lin is currently employed at Nvidia Corporation, an influential player in the technology sector, where he continues to push the boundaries of innovation in semiconductor design. His contributions have played a pivotal role in enhancing system performance and reliability.

Collaborations

Throughout his career, Lin has collaborated with other esteemed professionals, including Ge Yang and Charles Chew-Yuen Young. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Hwong-Kwo Lin's contributions to the fields of SRAM and flip-flop technologies have made a lasting impact in the semiconductor industry. With a robust patent portfolio and a commitment to innovation, he remains a key figure in advancing memory technologies for future applications.

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