The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Aug. 27, 2013
Jun Yang, Shanghai, CN;
Hwong-kwo Lin, Palo Alto, CA (US);
Hua Chen, Shanghai, CN;
Yong LI, Shanghai, CN;
Ju Shen, Shanghai, CN;
Jun Yang, Shanghai, CN;
Hwong-Kwo Lin, Palo Alto, CA (US);
Hua Chen, Shanghai, CN;
Yong Li, Shanghai, CN;
Ju Shen, Shanghai, CN;
NVIDIA CORPORATION, Santa Clara, CA (US);
Abstract
In various embodiments, a memory cell and a memory are provided. The memory cell comprises a Static Random Access Memory (SRAM) cell including a reset-set (RS) flip-flop and a Read Only Memory (ROM) cell being connected (or coupled) to the SRAM cell to set logic states of internal latch nodes of the RS flip-flop when the ROM cell is triggered. The size of the memory cells proposed in an embodiment of the invention is much smaller than the sum of the size of ROM cells and the size of SRAM cells with the capacity of the memory cells same as the sum of the capacity of the ROM cells and the capacity of the SRAM cells.