Company Filing History:

15 out of 40,635

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

1 out of 9,138

Industrial Technology Research Institute

patents

1 out of 7,074

United Microelectronics Corp.

patents

Years Active: 1996-2006

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7054122 - VDDCORE to VSS ESD clamp made of core device (2006-05-30),

2. 6885529 - CDM ESD protection design using deep N-well structure (2005-04-26),

3. 6838734 - ESD implantation in deep-submicron CMOS technology for high-voltage-tolerant applications (2005-01-04),

4. 6765771 - SCR devices with deep-N-well structure for on-chip ESD protection circuits (2004-07-20),

5. 6671153 - Low-leakage diode string for use in the power-rail ESD clamp circuits (2003-12-30),

6. 6576958 - ESD protection networks with NMOS-bound or PMOS-bound diode structures in a shallow-trench-isolation (STI) CMOS process (2003-06-10),

7. 6566715 - Substrate-triggered technique for on-chip ESD protection circuit (2003-05-20),

8. 6514839 - ESD implantation method in deep-submicron CMOS technology for high-voltage-tolerant applications with light-doping concentrations (2003-02-04),

9. 6444404 - Method of fabricating ESD protection device by using the same photolithographic mask for both the ESD implantation and the silicide blocking regions (2002-09-03),

10. 6388850 - Gate-coupled ESD protection circuit without transient leakage (2002-05-14),

11. 6249410 - ESD protection circuit without overstress gate-driven effect (2001-06-19),

12. 6144542 - ESD bus lines in CMOS IC's for whole-chip ESD protection (2000-11-07),

13. 6011681 - Whole-chip ESD protection for CMOS ICs using bi-directional SCRs (2000-01-04),

14. 6008684 - CMOS output buffer with CMOS-controlled lateral SCR devices (1999-12-28),

15. 6002568 - ESD protection scheme for mixed-voltage CMOS integrated circuits (1999-12-14),

Title: The Innovations of Hun-Hsien Chang

Introduction

Hun-Hsien Chang is a prominent inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of integrated circuits, holding a total of 17 patents. His work focuses on enhancing the reliability and performance of electronic devices through innovative designs.

Latest Patents

Among his latest patents is the "VDDCORE to VSS ESD clamp made of core device." This invention comprises an ESD clamp circuit used in integrated circuits with multiple power supplies. The ESD clamp circuit is connected between the core voltage source and the low voltage source, fabricated using a process that creates core circuits. It features a low trigger voltage, allowing it to conduct large currents to protect the core circuit from damage. Another notable patent is the "CDM ESD protection design using deep N-well structure." This invention provides a charged-device model (CDM) electrostatic discharge (ESD) protection circuit for integrated circuits. The ESD protection circuit includes an ESD clamp device and a functional component, ensuring that the functional component is protected during CDM ESD events.

Career Highlights

Hun-Hsien Chang has worked with notable companies such as Taiwan Semiconductor Manufacturing Company Ltd. and the Industrial Technology Research Institute. His experience in these organizations has allowed him to develop and refine his innovative ideas in the field of semiconductor technology.

Collaborations

Some of his coworkers include Ming-Dou Ker and Tung-Yang Chen, who have collaborated with him on various projects, contributing to the advancement of ESD protection technologies.

Conclusion

Hun-Hsien Chang's contributions to the field of integrated circuits and ESD protection are noteworthy. His innovative patents and collaborations have significantly impacted the reliability of electronic devices.

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