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For the Inventor, By the Inventor

Toufen Town, Taiwan

Hsu-Shun Chen

USPTO Granted Patents = 21

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 45(Granted Patents)


Location History:

  • Toufen Town, Miaoli County, TW (2013)
  • Toufen, TW (2013)
  • Toufen Township, TW (2015)
  • Miaoli County, TW (2013 - 2018)
  • Toufen Town, TW (2012 - 2021)
  • Hsinchu, TW (2022 - 2024)

Company Filing History:

goldMedal21 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2012-2025

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21 patents (USPTO):
1. 12315562 - RRAM circuit and method (2025-05-27),
2. 12014776 - RRAM circuit and method (2024-06-18),
3. 11393528 - RRAM circuit and method (2022-07-19),
4. 10930344 - RRAM circuit and method (2021-02-23),
5. 9934864 - Method of setting a reference current in a nonvolatile memory device (2018-04-03),
6. 9613710 - Multiple-time programmable memory (2017-04-04),
7. 9595340 - Nonvolatile memory device and method of setting a reference current in a nonvolatile memory device (2017-03-14),
8. 9478297 - Multiple-time programmable memory (2016-10-25),
9. 9324383 - Source line voltage regulation scheme for leakage reduction (2016-04-26),
10. 9190995 - Multiple power domain electronic device and related method (2015-11-17),
11. 9099168 - Method for extending word-line pulses (2015-08-04),
12. 8928372 - Multiple power domain electronic device and related method (2015-01-06),
13. 8634268 - Memory circuit having decoding circuits and method of operating the same (2014-01-21),
14. 8629706 - Power switch and operation method thereof (2014-01-14),
15. 8451669 - Multi-power domain design (2013-05-28),

Title: Hsu-Shun Chen: Innovator in RRAM Technology

Introduction

Hsu-Shun Chen, based in Toufen Town, Taiwan, is a renowned inventor with an impressive portfolio of 20 patents. His contributions to the field of memory circuits, particularly in resistive random-access memory (RRAM), have positioned him as a key player in the semiconductor industry.

Latest Patents

Among Hsu-Shun Chen's latest inventions are revolutionary patents related to RRAM circuits and methods. One notable patent describes a memory circuit that integrates a bias voltage generator, an activation voltage generator with a resistive device, and a drive circuit configured with amplifiers. This innovation allows for the generation of a precise bias voltage level on the bias voltage node, enhancing the efficiency of the RRAM array. Another patent focuses on a similar concept, detailing a memory circuit that utilizes a first transistor within the bias voltage generator to create a voltage difference based on current and activation voltage, ultimately optimizing performance in RRAM functionality.

Career Highlights

Hsu-Shun Chen currently contributes his expertise at Taiwan Semiconductor Manufacturing Company Limited, a leading name in the semiconductor fabrication industry. His work plays a crucial role in advancing the technology underlying modern electronic devices, making significant strides toward innovative memory solutions.

Collaborations

In his pursuit of innovation, Hsu-Shun Chen collaborates closely with esteemed colleagues such as Cheng-Hsiung Kuo and Gu-Huan Li. Their joint efforts elevate the research and development of cutting-edge technologies in the realm of semiconductor memory circuits.

Conclusion

Hsu-Shun Chen's inventive spirit and dedication to advancing RRAM technology underscore the impact of his work in the semiconductor industry. With an impressive record of patents and valuable collaborations, he continues to shape the future of memory circuits, solidifying his place among the industry's notable inventors.

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