The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Jul. 01, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Cheng Chou, Hsinchu, TW;
Hsu-Shun Chen, Hsinchu, TW;
Chien-An Lai, Hsinchu, TW;
Pei-Ling Tseng, Hsinchu, TW;
Zheng-Jun Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory circuit includes a bias voltage generator including a bias voltage node, an activation voltage generator including a resistive device, and a first amplifier, a drive circuit including a second amplifier including an input terminal coupled to the bias voltage node, and a resistive random-access memory (RRAM) array. The activation voltage generator and the first amplifier are configured to generate a portion of a bias voltage level on the bias voltage node based on a resistance of the resistive device, and the drive circuit is configured to output a drive voltage having the bias voltage level to the RRAM array.