The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Feb. 18, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Cheng Chou, Hsinchu, TW;
Chien-An Lai, Hsinchu, TW;
Hsu-Shun Chen, Hsinchu, TW;
Zheng-Jun Lin, Hsinchu, TW;
Pei-Ling Tseng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A memory circuit includes a bias voltage generator, a drive circuit, and a resistive random-access memory (RRAM) device. The bias voltage generator includes a first transistor configured to generate a voltage difference based on a first current and an activation voltage, and is configured to output the activation voltage and a bias voltage based on the voltage difference. The drive circuit is configured to receive the bias voltage and output a drive voltage having a voltage level based on the bias voltage, and the RRAM device is configured to receive the activation voltage and conduct a second current responsive to the drive voltage and the activation voltage.