The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
May. 24, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chung-Cheng Chou, Hsinchu, TW;
Hsu-Shun Chen, Toufen Town, TW;
Chien-An Lai, Hsinchu, TW;
Pei-Ling Tseng, Hsinchu, TW;
Zheng-Jun Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A memory circuit includes a bias voltage generator, a drive circuit, and a resistive random-access memory (RRAM) device. The bias voltage generator includes a first current path configured to receive a first current from a current source, and output a bias voltage based on a voltage difference generated from conduction of the first current in the first current path. The drive circuit is configured to receive the bias voltage and output a drive voltage having a voltage level based on the bias voltage, and the RRAM device is configured to conduct a second current responsive to the drive voltage.