Wilmington, DE, United States of America

Hongyu Wang

This inventor holds 17 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Chemical Mechanical Polishing. Top assignee: Rohm and Haas Electronic Materials Cmp Holdings, Inc.. Active years: 2006-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hongyu Wang. Retrieved from https://idiyas.com/inventor/hongyu-wang-6j312zfj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 76.5

 

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 37(Granted Patents)


Company Filing History:


Years Active: 2006-2019

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Areas of Expertise:
Chemical Mechanical Polishing
Polishing Composition
Cobalt Substrate
Copper Polishing
Ruthenium
Abrasive-Free
Polishing Slurry
Polymer-Coated Particles
Noble Metals
Low-Stain Composition
Cellulose Compositions
17 patents (USPTO):Explore Patents

Title: **The Innovative Contributions of Hongyu Wang in Semiconductor Technology**

Introduction

Hongyu Wang, a distinguished inventor based in Wilmington, DE, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 17 patents, he continues to push the boundaries of innovation, particularly in chemical mechanical polishing processes.

Latest Patents

Wang’s latest patents showcase groundbreaking methods designed to enhance the chemical mechanical polishing of substrates containing cobalt. One notable invention is a **Chemical mechanical polishing method for cobalt**, which outlines an advanced process to planarize substrates and improve surface topography by employing a sophisticated polishing composition. This process utilizes initial components such as water, an oxidizing agent, aspartic acid or its salts, and colloidal silica abrasives with diameters of 25 nm or less.

Another significant patent, the **Polishing slurry for cobalt-containing substrate**, presents an aqueous slurry formulation tailored for effective chemical mechanical polishing of semiconductor substrates with cobalt features. This patent specifies the inclusion of hydrogen peroxide, colloidal silica particles, and a cobalt corrosion inhibitor, ensuring optimal performance while limiting static etching of the cobalt alloy.

Career Highlights

Hongyu Wang is affiliated with Rohm and Haas Electronic Materials CMP Holdings, Inc., where he has been instrumental in developing innovative solutions that enhance semiconductor manufacturing processes. His expertise in chemical mechanical polishing has positioned him as a leading inventor in the electronics industry, driving advancements that are critical to modern technology.

Collaborations

Throughout his career, Wang has collaborated with esteemed professionals such as John Francis Quanci and Murali G Theivanayagam. Together, they have combined their knowledge and skills to develop innovative technologies that meet the evolving demands of the semiconductor sector.

Conclusion

Hongyu Wang's contributions to the field of semiconductor technology through his numerous patents exemplify the essence of innovation. His dedication to improving chemical mechanical polishing methods continues to inspire advancements that are crucial for the industry, solidifying his reputation as a prominent inventor.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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