The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Sep. 21, 2017
Applicant:

Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);

Inventors:

Murali G. Theivanayagam, New Castle, DE (US);

Hongyu Wang, Wilmington, DE (US);

Matthew Van Hanehem, Middletown, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); C09K 3/14 (2006.01); C09G 1/00 (2006.01); H01L 21/304 (2006.01); H01L 21/461 (2006.01); H01L 21/306 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C09G 1/00 (2013.01); C09K 3/14 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); H01L 21/304 (2013.01); H01L 21/30625 (2013.01); H01L 21/3212 (2013.01); H01L 21/461 (2013.01);
Abstract

A process for chemical mechanical polishing a substrate containing cobalt and TiN to planarize the surface and at least improve surface topography of the substrate. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; aspartic acid or salts thereof; and, colloidal silica abrasives with diameters of ≤25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away to planarize the substrate to provide improved cobalt:TiN removal rate selectivity.


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