Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Hongyu Wang

John Francis Quanci

Terence M Thomas

Murali G Theivanayagam

Tirthankar Ghosh

Francis J Kelley

Joseph K So

Richard Earl Partch

Matthew Richard Van Hanehem

Scott Alan Ibbitson

Nathaniel A Barney

Lee Melbourne Cook

David Wayne Mosley

Jiun-Fang Wang

Heinz F Reinhardt

Robert David Solomon

Vikas Sachan

Qianqiu Ye

Ching-Hsun Chao

A process for chemical mechanical polishing a substrate containing cobalt and TiN to planarize the surface and at least improve surface topography of the substrate. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; aspartic acid or salts thereof; and, colloidal silica abrasives with diameters of &#x2264;25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away to planarize the substrate to provide improved cobalt:TiN removal rate selectivity.

Chemical mechanical polishing method for cobalt

The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (&#x3b1;), 0.5 to 3 wt % colloidal silica particles (&#x3b2;), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (&#x3b3;) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N'-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N&#x2032;,N&#x2032;-tetraacetic acid, and balance water having a pH of 5 to 9. The total concentrations remain within the following formulae as follows: wt % (&#x3b1;)+wt % (&#x3b2;)=1 to 4 wt % for polishing the cobalt or cobalt alloy; wt % (&#x3b3;)&#x2264;2*wt % (&#x3b1;) for limiting static etch of the cobalt or cobalt alloy; and wt % (&#x3b2;)+wt % (&#x3b3;)&#x2264;3*wt % (&#x3b1;) for limiting static etch.

Polishing slurry for cobalt-containing substrate

A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of &#x2264;25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.

The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (&#x3b1;) into a slurry containing 0.5 to 3 wt % colloidal silica particles (&#x3b2;), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (&#x3b3;) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N'-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N&#x2032;,N&#x2032;-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Coto Coof the semiconductor substrate to prevent runaway dissolution of the Coreduces polishing defects in the semiconductor substrate. Polishing the semiconductor substrate with a polishing pad removes the surface portion of the semiconductor substrate oxidized to Co.

Method for polishing cobalt-containing substrate

The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.

Low-stain polishing composition

A method for chemical mechanical polishing of a substrate comprising ruthenium and copper is provided wherein the substrate is contacted with a polishing slurry containing an abrasive, hypochlorite, a copolymer of acrylic acid and methacrylic acid, benzotriazole, poly(methyl vinyl ether) and a non-ionic surfactant at a pH of 9 to 11.

Method for chemical mechanical polishing substrates containing ruthenium and copper

A method for chemical mechanical polishing of a semiconductor wafer containing a nonferrous metal is provided, comprising: providing a chemical mechanical polishing composition comprising 1 to 25 wt % of an oxidizer; 0.01 to 15 wt % of an inhibitor for the nonferrous metal; 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether(meth)acrylate and 1-vinylimidazole; and water; wherein the chemical mechanical polishing composition has an acidic pH; providing a chemical mechanical polishing pad; providing a semiconductor wafer containing the nonferrous metal; creating dynamic contact between the chemical mechanical polishing pad and the semiconductor wafer; and, dispensing the polishing solution at or near the interface between the chemical mechanical polishing pad and the semiconductor wafer.

Chemical mechanical polishing composition and methods relating thereto

A chemical mechanical polishing composition and method is provided, wherein the low-k dielectric material removal rate remains stable following the polishing of a 110polished wafer in a plurality of wafers to be polished.

Chemical mechanical polishing composition and method

A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.

A method of manufacturing polymer-coated particles is useful for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. First it provides a dispersion of particle cores in a non-aqueous solvent. Then introducing a polymeric precursor into the dispersion to react the polymeric precursor forms a polymer. The polymer coats at least a portion of the surface of the particle cores with the polymer and forms the polymer-coated particles having a solid outer polymeric shell. Substituting the non-aqueous solvent with water forms an aqueous mixture containing the polymer-coated particles. And it forms an aqueous chemical mechanical polishing formulation with the polymer-coated particles without drying the polymer-coated particles.

Method of manufacturing of polymer-coated particles for chemical mechanical polishing

The present invention provides an aqueous composition useful for polishing copper interconnects on a semiconductor wafer comprising by weight percent up to 25 oxidizer, 0.05 to 1 inhibitor for a nonferrous metal, 0.01 to 5 complexing agent for the nonferrous metal, 0.01 to 5 modified cellulose, and balance water, wherein the composition is free of polyacrylic acid, the amount of modified cellulose providing a copper removal function and a wafer clear of copper.

Compositions and methods for polishing copper

An aqueous abrasive-free composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0 to 15 weight percent water soluble modified cellulose, 0 to 15 weight percent phosphorus compound, 0.005 to 5 weight percent of an amphiphilic polymer, the amphiphilic polymer having an ionic hydrophilic portion with a carbon number of 2 to 250 and water.

Abrasive-free chemical mechanical polishing compositions and methods relating thereto

The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Chemical mechanical polishing compositions and methods relating thereto

The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

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Wilmington, DE, United States of America

Hongyu Wang