The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2019
Filed:
Mar. 06, 2017
Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);
Murali G. Theivanayagam, New Castle, DE (US);
Hongyu Wang, Wilmington, DE (US);
Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark, DE (US);
Abstract
The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (α), 0.5 to 3 wt % colloidal silica particles (β), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (γ) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N'-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N′,N′-tetraacetic acid, and balance water having a pH of 5 to 9. The total concentrations remain within the following formulae as follows: wt % (α)+wt % (β)=1 to 4 wt % for polishing the cobalt or cobalt alloy; wt % (γ)≤2*wt % (α) for limiting static etch of the cobalt or cobalt alloy; and wt % (β)+wt % (γ)≤3*wt % (α) for limiting static etch.