Hongfa Luan

Title: Innovative Contributions of Inventor Hongfa Luan

Introduction

Hongfa Luan is an esteemed inventor based in Baoshan, Taiwan. With a remarkable portfolio of 12 patents, Luan has made significant contributions to the field of semiconductor technology, particularly in enhancing the performance and reliability of semiconductor devices.

Latest Patents

Among his latest innovations, Luan has developed a method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layer. This novel embodiment offers a thermal treatment process that follows a high-pressure anneal process. The technology ensures that hydrogen is maintained at the interface between the channel region and the gate dielectric layer in a field-effect transistor, while simultaneously removing hydrogen from the bulk portion of the gate dielectric layer. This approach effectively reduces the threshold voltage shift induced by the high-pressure anneal. Importantly, this high-pressure anneal and thermal treatment can be implemented at any point after the formation of the gate dielectric layer, facilitating a seamless integration into existing process flows.

Career Highlights

Hongfa Luan has been an integral part of Taiwan Semiconductor Manufacturing Company, Limited (TSMC), a leader in the semiconductor industry. His work has not only garnered multiple patents but also positioned him as a key figure in advancing semiconductor manufacturing processes.

Collaborations

In his career, Luan has collaborated with talented engineers and researchers, including Chun-Yen Peng and Cheng-Po Chau. These partnerships have fostered innovation and contributed to the success of their projects within TSMC.

Conclusion

With a wealth of knowledge and a proven track record in semiconductor innovations, Hongfa Luan stands out as a pioneering inventor. His contributions are pivotal in shaping the future of semiconductor technology, and his continued work promises to drive further advancements in the industry.