The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Dec. 28, 2012
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chi-Yuan Chen, Hsin-Chu, TW;
Teng-Chun Tsai, Tainan, TW;
Kuo-Yin Lin, Jhubei, TW;
Wan-Chun Pan, Hsin-Chu, TW;
Hsiang-Pi Chang, New Taipei, TW;
Shi Ning Ju, Hsin-Chu, TW;
Yen-Yu Chen, Taipei, TW;
Hongfa Luan, Hsin-Chu, TW;
Kuo-Cheng Ching, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material and a second semiconductive material disposed over the first semiconductive material. A top portion of the second semiconductive material of the semiconductor fin is removed, and a top portion of the first semiconductive material is exposed. A top portion first semiconductive material is removed from beneath the second semiconductive material. The first semiconductive material and the second semiconductive material are oxidized, forming a first oxide comprising a first thickness on the first semiconductive material and a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness. The second oxide is removed from the second semiconductive material, and manufacturing of the FinFET is completed.