The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2015
Filed:
Oct. 15, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chi-Ming Liao, Hsin-Chu, TW;
Chun-Heng Chen, Hsin-Chu, TW;
Sheng-Po Wu, Zhongli, TW;
Ming-Feng Hsieh, New Taipei, TW;
Hongfa Luan, Baoshan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Presented herein is a method for forming a semiconductor film using an adhesion layer, comprising providing an oxide layer disposed over a substrate, forming at least one adhesion layer over the oxide layer, and forming a film layer over the at least one adhesion layer in a same process step as the forming the at least one adhesion layer. Forming the at least one adhesion layer further comprises at least forming a first adhesion layer over the oxide layer and forming a second adhesion layer over the first adhesion layer. Forming the first adhesion layer comprises providing the terminating gas at a substantially constant first flow rate, and wherein the forming the second adhesion layer comprises ramping a flow rate of the terminating gas to a zero flow rate from the first flow rate.