The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Aug. 18, 2011
Gin-chen Huang, New Taipei, TW;
Tsai-fu Hsiao, Hsin-Chu, TW;
Ching-hong Jiang, New Taipei, TW;
Neng-kuo Chen, Sinshih Township, TW;
Hongfa Luan, Hsin-Chu, TW;
Sey-ping Sun, Hsin-Chu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Gin-Chen Huang, New Taipei, TW;
Tsai-Fu Hsiao, Hsin-Chu, TW;
Ching-Hong Jiang, New Taipei, TW;
Neng-Kuo Chen, Sinshih Township, TW;
Hongfa Luan, Hsin-Chu, TW;
Sey-Ping Sun, Hsin-Chu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor device manufacturing methods and methods of forming insulating material layers are disclosed. In one embodiment, a method of forming a composite insulating material layer of a semiconductor device includes providing a workpiece and forming a first sub-layer of the insulating material layer over the workpiece using a first plasma power level. A second sub-layer of the insulating material layer is formed over the first sub-layer of the insulating material layer using a second plasma power level, and the workpiece is annealed.