Hitoshi Hashima

Title: Hitoshi Hashima: Innovations in Semiconductor Substrate Handling

Introduction

Hitoshi Hashima is an inventor based in Koshi, Japan, whose patent work focuses on substrate treatment and transfer technologies. He works at Tokyo Electron Limited and is named on 5 patents.

Latest Patents

Hashima’s recent patent work includes inventions designed to support substrates and manage their movement during semiconductor processing.

“Substrate Support Member, Substrate Treatment Apparatus, and Substrate Transfer Apparatus” describes a solution-treatment system that rotates and holds a substrate while a nozzle applies treatment solution. The apparatus uses raising and lowering pins to lift the substrate above a stage. At least one pin has a conductive main body and an inductor part positioned outside it. The pin’s top supports and contacts the substrate, while the opposite side is grounded directly or indirectly.

“Substrate Transfer Apparatus and Substrate Transfer Method” describes a transfer system with a non-conductive support and a mover. A grounded connector joins them. Conductive contacts on the support hold the substrate without letting it touch the support itself, while a strip-shaped conductive path connects the contacts to the connector. The path includes a bend that creates an interval at least twice its width.

Career Highlights

Hashima’s listed inventions address practical challenges in substrate processing, including stable support, controlled transfer, and electrical grounding. His work at Tokyo Electron Limited places these contributions within the company’s semiconductor manufacturing technology portfolio.

Collaborations

Hashima’s named coworkers include Tohru Tochihara and Michiaki Matsushita. Their shared professional context reflects the collaborative environment in which semiconductor equipment innovations are developed.

Conclusion

Hitoshi Hashima’s patent portfolio highlights engineering approaches to substrate treatment and transfer, with an emphasis on support structures, conductive paths, and grounding in semiconductor equipment.