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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Hiten Kothari

USPTO Granted Patents = 10 

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 37(Granted Patents)


Location History:

  • Beaverton, OR (US) (2015 - 2022)
  • Hillsboro, OR (US) (2017 - 2022)

Company Filing History:

goldMedal10 out of 54,750 
 
Intel Corporation
 patents

Years Active: 2015-2025

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10 patents (USPTO):Explore Patents
1. 12406931 - Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication (2025-09-02),
2. 12261122 - Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication (2025-03-25),
3. 11489112 - Resistive random access memory device and methods of fabrication (2022-11-01),
4. 11430948 - Resistive random access memory device with switching multi-layer stack and methods of fabrication (2022-08-30),
5. 11393754 - Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication (2022-07-19),
6. 9818710 - Anchored interconnect (2017-11-14),
7. 9721886 - Preservation of fine pitch redistribution lines (2017-08-01),
8. 9530740 - 3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach (2016-12-27),
9. 9449913 - 3D interconnect structure comprising fine pitch single damascene backside metal redistribution lines combined with through-silicon vias (2016-09-20),
10. 9142510 - 3D interconnect structure comprising through-silicon vias combined with fine pitch backside metal redistribution lines fabricated using a dual damascene type approach (2015-09-22),

Title: Hiten Kothari: Innovator in Integrated Circuit Fabrication

Introduction

Hiten Kothari is a prominent inventor based in Beaverton, OR (US). He has made significant contributions to the field of integrated circuit fabrication, holding a total of 10 patents. His work focuses on advancing technologies that enhance the performance and efficiency of electronic devices.

Latest Patents

One of Hiten Kothari's latest patents is titled "Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication." This patent describes innovative methods for fabricating contact over active gate (COAG) structures using etch stop layers. The integrated circuit structure includes multiple gate structures above a substrate, each featuring a gate insulating layer. Alternating with these gate structures are conductive trench contact structures, each equipped with a trench insulating layer. The design incorporates a first dielectric etch stop layer that is continuous over both the trench insulating layers and the gate insulating layers. Additionally, a second dielectric etch stop layer is placed directly on the first, ensuring distinct functionality. An interlayer dielectric material is then applied on top of the second dielectric etch stop layer.

Career Highlights

Hiten Kothari has built a successful career at Intel Corporation, where he has been instrumental in developing cutting-edge technologies. His expertise in integrated circuit design and fabrication has positioned him as a key player in the industry. His innovative approaches have not only contributed to the advancement of Intel's product offerings but have also set new standards in the field.

Collaborations

Hiten has collaborated with notable colleagues, including Kevin J Lee and Andrew W Yeoh. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Hiten Kothari's contributions to integrated circuit fabrication exemplify the spirit of innovation. His patents and collaborative efforts continue to shape the future of electronic devices, making him a significant figure in the field.

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