The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2022

Filed:

Sep. 28, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Timothy Glassman, Portland, OR (US);

Dragos Seghete, Portland, OR (US);

Nathan Strutt, Beaverton, OR (US);

Namrata S. Asuri, Portland, OR (US);

Oleg Golonzka, Beaverton, OR (US);

Hiten Kothari, Hillsboro, OR (US);

Matthew J. Andrus, Hillsboro, OR (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); H01L 27/2436 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1625 (2013.01); H01L 45/1641 (2013.01); H01L 45/1675 (2013.01);
Abstract

A memory device includes a bottom electrode above a substrate, a first switching layer on the bottom electrode, a second switching layer including aluminum on the first switching layer, an oxygen exchange layer on the second switching layer and a top electrode on the oxygen exchange layer. The presence of the second switching layer including aluminum on the first switching layer enables a reduction in electro-forming voltage of the memory device.


Find Patent Forward Citations

Loading…