Portland, OR, United States of America

Timothy E Glassman

This inventor holds 29 USPTO granted patents and 3 published patent applications, primarily in Dielectric Materials. Top assignees: Intel Corporation, Advanced Technology Materials, Inc., Other. Active years: 1997-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Timothy E Glassman. Retrieved from https://idiyas.com/inventor/timothy-e-glassman

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 86.2

Average Co-Inventor Count = 4.4

ph-index = 10

Forward Citations = 586(Granted Patents)


Location History:

  • Millshora, OR (US) (1999)
  • Danbury, CT (US) (1997 - 2000)
  • Portland, OR (US) (2004 - 2024)

Company Filing History:


Years Active: 1997-2025

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Areas of Expertise:
Dielectric Diffusion Barriers
Resistive Random Access Memory
Chemical Vapor Deposition
MIM Capacitors
High-K Gate Dielectric
Metal Films
Ion Implantation
Precursor Compositions
Semiconductor Devices
Memory Devices
Ultra-Thin Dielectrics
Dopants Generation
29 patents (USPTO):Explore Patents

Title: Innovations by Timothy E. Glassman in Dielectric Diffusion Barriers

Introduction

Timothy E. Glassman, based in Portland, OR, is an esteemed inventor with a remarkable portfolio comprising 28 patents. His work has significantly contributed to the development of advanced materials and methods in technology, particularly focusing on dielectric diffusion barriers in semiconductor applications.

Latest Patents

Among his latest inventions is a patent for conformal low temperature hermetic dielectric diffusion barriers. This innovation involves the creation of conformal hermetic dielectric films that serve as dielectric diffusion barriers over three-dimensional topography. The dielectric diffusion barrier features a dielectric layer, such as a metal oxide, which can be deposited using atomic layer deposition (ALD) techniques. This method achieves conformality and density that surpasses traditional silicon dioxide-based films deposited by a plasma-enhanced chemical vapor deposition (PECVD) process. Additionally, the invention includes multi-layered films with high-k and low-k or intermediate-k dielectric layers to reduce the dielectric constant, thereby enhancing performance in electronic components.

Career Highlights

Timothy has had a fruitful career, with notable positions at leading companies such as Intel Corporation and Advanced Technology Materials, Inc. His expertise has facilitated advancements in the materials used for semiconductor manufacturing, emphasizing innovation in dielectric barrier technologies.

Collaborations

Throughout his career, Timothy has collaborated with several prominent professionals in the field, including Sean W. King and Hui Jae Yoo. These partnerships have further propelled his research and development initiatives, paving the way for cutting-edge inventions in material science.

Conclusion

Timothy E. Glassman’s contributions to the field of dielectric diffusion barriers are profound and impactful. His inventiveness in creating advanced materials continues to shape the landscape of technology, demonstrating the importance of innovation in enhancing the performance and reliability of semiconductor devices. His extensive patent portfolio is a testament to his expertise and dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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