The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Sep. 28, 2017
Intel Corporation, Santa Clara, CA (US);
Namrata S. Asuri, Portland, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Nathan Strutt, Beaverton, OR (US);
Patrick J. Hentges, Portland, OR (US);
Trinh T. Van, Hillsboro, OR (US);
Hiten Kothari, Beaverton, OR (US);
Ameya S. Chaudhari, Hillsboro, OR (US);
Matthew J. Andrus, Hillsboro, OR (US);
Timothy E. Glassman, Portland, OR (US);
Dragos Seghete, Portland, OR (US);
Christopher J. Wiegand, Portland, OR (US);
Daniel G. Ouellette, Portland, OR (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.