Company Filing History:
Years Active: 2022
Title: Namrata S Asuri: Innovator in Resistive Random Access Memory Technology
Introduction
Namrata S Asuri is a prominent inventor based in Portland, OR (US). She has made significant contributions to the field of memory technology, particularly in resistive random access memory (RRAM) devices. With a total of 3 patents to her name, her work has garnered attention in the tech industry.
Latest Patents
Namrata's latest patents include innovative designs for resistive random access memory devices. One of her patents describes a resistive random access memory device and methods of fabrication. This apparatus features an interconnect made of conductive material above a substrate, along with a resistive random access memory device coupled to the interconnect. The design includes an electrode structure with a specific width, a switching layer, and an oxygen exchange layer, all contributing to the device's functionality.
Another notable patent focuses on a resistive random access memory device with a switching multi-layer stack. This memory device incorporates a bottom electrode, multiple switching layers, and an oxygen exchange layer, which collectively enhance the device's performance by reducing the electro-forming voltage.
Career Highlights
Namrata S Asuri is currently employed at Intel Corporation, where she continues to push the boundaries of memory technology. Her work at Intel has positioned her as a key player in the development of advanced memory solutions.
Collaborations
Throughout her career, Namrata has collaborated with notable colleagues, including Timothy E Glassman and Dragos Seghete. These collaborations have further enriched her research and development efforts in the field of memory technology.
Conclusion
Namrata S Asuri is a trailblazer in the realm of resistive random access memory technology. Her innovative patents and contributions to Intel Corporation highlight her significant impact on the industry.