Patrick J Hentges

Title: Patrick J Hentges: Innovator in Resistive Random Access Memory Technology

Introduction

Patrick J Hentges is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of memory technology, particularly through his innovative work on resistive random access memory (RRAM) devices. His expertise and creativity have led to the development of a patented technology that enhances data storage capabilities.

Latest Patents

Hentges holds a patent for a "Resistive random access memory device and methods of fabrication." This invention includes an apparatus featuring an interconnect made of conductive material situated above a substrate. The RRAM device is coupled to this interconnect and comprises an electrode structure with a specific width. Additionally, the device includes a switching layer and an oxygen exchange layer, which are crucial for its functionality. The design also incorporates a top electrode and an encapsulation layer, showcasing Hentges' innovative approach to memory technology. He has 1 patent to his name.

Career Highlights

Patrick J Hentges is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing and memory solutions. His role at Intel allows him to work on cutting-edge technologies that shape the future of computing.

Collaborations

Hentges has collaborated with talented coworkers, including Namrata S Asuri and Oleg Golonzka. These partnerships have likely contributed to the successful development of his patented technologies.

Conclusion

Patrick J Hentges is a distinguished inventor whose work in resistive random access memory technology has made a significant impact in the field. His innovative patent and contributions at Intel Corporation highlight his role as a key player in advancing memory solutions.