Intel Corporation

Patrick J Hentges

Oleg Golonzka

Christopher J Wiegand

Timothy E Glassman

Daniel Ouellette

Hiten Kothari

Nathan Strutt

Dragos Seghete

Namrata S Asuri

Matthew J Andrus

Trinh T Van

Ameya S Chaudhari

An apparatus, includes an interconnect, including a conductive material, above a substrate and a resistive random access memory (RRAM) device coupled to the interconnect. The RRAM device includes an electrode structure above the interconnect, where an upper portion of the electrode structure has a first width. The RRAM device further includes a switching layer on the electrode structure, where the switching layer has the first width and an oxygen exchange layer, having a second width less than the first width, on a portion of the switching layer. The RRAM device further includes a top electrode above the oxygen exchange layer, where the top electrode has the second width and an encapsulation layer on a portion of the switching layer, where the switching layer extends along a sidewall of the oxygen exchange layer.

Resistive random access memory device and methods of fabrication

Growing community of inventors

Portland, OR, United States of America

Patrick J Hentges