The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Mar. 28, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Jiho Kang, Beaverton, OR (US);

Hiten Kothari, Hillsboro, OR (US);

Carole C. Montarou, Portland, OR (US);

Andrew W. Yeoh, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 23/3192 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13025 (2013.01); H01L 2924/35121 (2013.01);
Abstract

An embodiment includes a semiconductor structure comprising: a backend portion including a plurality of metal layers between bottom and top metal layers; the top metal layer including a top metal layer portion having first and second opposing sidewall surfaces and a top surface that couples the sidewall surfaces to one another; an insulator layer directly contacting the top surface; and a via coupling a contact bump to the top metal layer portion; wherein a first vertical axis, orthogonal to a substrate coupled to the backend portion, intercepts the contact bump, the nitride layer, the via, and the top metal layer portion. Other embodiments are described herein.


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