logo

For the Inventor, By the Inventor

Kawasaki, Japan

Hiroyuki Ohta

This inventor holds 38 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Fujitsu Semiconductor Limited, Fujitsu Corporation, Fujitsu Microelectronics Limited. Active years: 1996-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Ohta. Retrieved from https://idiyas.com/inventor/hiroyuki-ohta-5vfotc4e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 38 

% Patents Active = 60.5


Average Co-Inventor Count = 2.2

ph-index = 10

Forward Citations = 239(Granted Patents)


Location History:

  • Kawasaki, JP (1996 - 2013)
  • Kanagawa, JP (2000 - 2015)
  • Kokubunji, JP (2012 - 2017)

Company Filing History:

goldMedal15 out of 1,674 
 
Fujitsu Semiconductor Limited
 patents
silverMedal12 out of 39,374 
 
Fujitsu Corporation
 patents
bronzeMedal10 out of 467 
 
Fujitsu Microelectronics Limited
 patents
4. 1 out of 6 
 
Sumco Techxiv Kabushiki Kaisha
 patents

Years Active: 1996-2017

Loading Chart...
Loading Chart...
Areas of Expertise:
Semiconductor Device
Fabrication Method
Epitaxial Growth
Insulating Film
Buffer Layer
Silicided Gate Electrode
STI Technology
Crystal Growth
Integrated Circuit
Impurity Diffusion
Wafer Manufacturing
Junction Leak Current
38 patents (USPTO):Explore Patents
1. 9786565 - Semiconductor device and method of manufacturing the semiconductor device (2017-10-10),
2. 9103049 - Method for melting semiconductor wafer raw material and crystal growing method for semiconductor wafer (2015-08-11),
3. 8518785 - Semiconductor device and method of manufacturing the same (2013-08-27),
4. 8481383 - Method of forming semiconductor device having buffer layer between sidewall insulating film and semiconductor substrate (2013-07-09),
5. 8324040 - Semiconductor device and method for fabricating the same (2012-12-04),
6. 8288757 - Semiconductor device and manufacturing method thereof (2012-10-16),
7. 8278177 - Semiconductor device and method of manufacturing the same (2012-10-02),
8. 8258576 - Method of manufacturing a semiconductor device including epitaxially growing semiconductor epitaxial layers on a surface of semiconductor substrate (2012-09-04),
9. 8207042 - Semiconductor device and method of manufacturing the same (2012-06-26),
10. 8164085 - Semiconductor device and production method thereof (2012-04-24),
11. 7977194 - Method for fabricating semiconductor device with fully silicided gate electrode (2011-07-12),
12. 7968414 - Semiconductor device and production method thereof (2011-06-28),
13. 7906798 - Semiconductor device having buffer layer between sidewall insulating film and semiconductor substrate (2011-03-15),
14. 7875521 - Semiconductor device and production method thereof (2011-01-25),
15. 7838401 - Semiconductor device and manufacturing method thereof (2010-11-23),

Title: The Innovative Journey of Hiroyuki Ohta

Introduction: Hiroyuki Ohta is a visionary inventor hailing from Kawasaki, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hiroyuki Ohta holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing his commitment to creating cutting-edge technologies that shape the future.

Career Highlights: With a career spanning over two decades, Hiroyuki Ohta has worked tirelessly to push the boundaries of what is possible in the world of invention. His innovative spirit has led to the development of revolutionary products that have transformed industries and improved the lives of many.

Collaborations: Throughout his career, Hiroyuki Ohta has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Hiroyuki Ohta's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His contributions continue to inspire the next generation of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…