The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Sep. 22, 2009
Yosuke Shimamune, Kawasaki, JP;
Masahiro Fukuda, Kawasaki, JP;
Young Suk Kim, Kawasaki, JP;
Akira Katakami, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Naoyoshi Tamura, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Yosuke Shimamune, Kawasaki, JP;
Masahiro Fukuda, Kawasaki, JP;
Young Suk Kim, Kawasaki, JP;
Akira Katakami, Kawasaki, JP;
Akiyoshi Hatada, Kawasaki, JP;
Naoyoshi Tamura, Kawasaki, JP;
Hiroyuki Ohta, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.