Akiyoshi Hatada

This inventor holds 33 USPTO granted patents and 3 EPO patents. Top assignees: Fujitsu Semiconductor Limited, Fujitsu Corporation, Fujitsu Microelectronics Limited. Active years: 1998-2018.

USPTO Granted Patents = 33

% Patents Active = 78.8

EPO Patents = 3

Average Co-Inventor Count = 4.4

ph-index = 10

Forward Citations = 253(Granted Patents)

Location History:

Kawakasi, JP (2013)
Yokohama, JP (2013 - 2017)
Kawasaki, JP (1998 - 2018)

Company Filing History:

15 out of 1,674

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Fujitsu Limited Kabushiki Kaisha Toshiba

patent

6. 1 out of 817

Mitsui Minings & Melting Co., Ltd.

patents

7. 1 out of 834,411

Other

patents

where one patent can have more than one assignee

Years Active: 1998-2018

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Areas of Expertise:

Semiconductor Device

Fabrication Method

Magnetic Storage Device

Semiconductor Transistor

P-Channel MOS Transistor

Integrated Circuit

Compressive Stresses

Tensile Stresses

Manganese Oxide Slurry

Manufacturing Process

Barrier Interconnects

Production Method

33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9865734 - Semiconductor device and fabrication method thereof (2018-01-09),

2. 9812497 - Method for manufacturing magnetic storage device, and magnetic storage device (2017-11-07),

3. 9577098 - Semiconductor device and fabrication method thereof (2017-02-21),

4. 9401427 - Semiconductor device and fabrication method thereof (2016-07-26),

5. 9112027 - Semiconductor device and fabrication method thereof (2015-08-18),

6. 8952535 - Semiconductor transistor device with barrier interconnects (2015-02-10),

7. 8853673 - Semiconductor device and fabrication method thereof (2014-10-07),

8. 8575704 - Semiconductor device and manufacturing method of the semiconductor device (2013-11-05),

9. 8518785 - Semiconductor device and method of manufacturing the same (2013-08-27),

10. 8466450 - Semiconductor device and fabrication method thereof (2013-06-18),

11. 8278177 - Semiconductor device and method of manufacturing the same (2012-10-02),

12. 8207042 - Semiconductor device and method of manufacturing the same (2012-06-26),

13. 8164085 - Semiconductor device and production method thereof (2012-04-24),

14. 8158498 - P-channel MOS transistor and fabrication process thereof (2012-04-17),

15. 7968414 - Semiconductor device and production method thereof (2011-06-28),

Title: Akiyoshi Hatada: Pioneering Inventor from Kawasaki

Introduction: Akiyoshi Hatada is a renowned inventor hailing from Kawasaki, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Akiyoshi Hatada holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over three decades, Akiyoshi Hatada has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs.

Collaborations: Throughout his career, Akiyoshi Hatada has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge exchange.

Conclusion: Akiyoshi Hatada's relentless pursuit of innovation and his passion for creating technology that positively impacts society solidify his position as a pioneering inventor in the realm of technological advancements.